External Memory Interfaces Intel Agilex® 7 M-Series FPGA IP User Guide

ID 772538
Date 4/03/2023
Public

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Document Table of Contents

7.1.1. Intel Agilex 7 M-Series FPGA EMIF Memory Device Description IP (DDR5) Parameter Descriptions

Table 76.  Group: Configuration Save
Display Name Description
Configuration Filepath Filepath to Save. (.qprs extension) (Identifier: MEM_CONFIG_FILE_QPRS)
Table 77.  Group: High-Level Parameters
Display Name Description
Memory Format Specifies the packaging format of the memory device (Identifier: MEM_FORMAT)
Enable Data Mask Specifies whether byte masking is to be enabled by the memory. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_DM_EN)
Density of Each Memory Component Specifies the density of each memory component in Gbits. (Identifier: DDR5_MEM_DEVICE_DENSITY_GBITS)
Table 78.  Group: Memory Interface Parameters / Data Bus
Display Name Description
Device DQ Width

If the device is a DIMM: Specifies the full DQ width of the DIMM. In the case of DDR5 DIMM: If the DQ width is set to 32 bits, only 1 channel of the DIMM is used; If the DQ width is set to 64 bits, both channels of the DIMM are used.

If the interface is composed of discrete components: Specifies the DQ width of each discrete component. (Identifier: MEM_DEVICE_DQ_WIDTH)

Memory Component Data Width Specifies the data width of the memory component in bits. (Identifier: DDR5_MEM_DEVICE_COMPONENT_DQ_WIDTH)
Table 79.  Group: Memory Timing Parameters / Timing Parameters
Display Name Description
Memory Clock Frequency Specifies the operating frequency of the memory interface in MHz. If you change the memory frequency, you must select a matching Preset from the dropdown (or create a custom one), to update all the timing parameters. (Identifier: PHY_MEMCLK_FREQ_MHZ)
Memory Speed Bin Specifies the memory speed bin. (Identifier: DDR5_MEM_DEVICE_SPEEDBIN)
Memory Read Latency Specifies the read latency of the memory interface in cycles. (Identifier: DDR5_MEM_DEVICE_CL_CYC)
Memory Write Latency Specifies the write latency of the memory interface in cycles. (This is a derived parameter and cannot be changed.) (Identifier: DDR5_MEM_DEVICE_CWL_CYC)
Table 80.  Group: Memory Timing Parameters / Advanced Timing Parameters
Display Name Description
tREFI1 Specifies the maximum average refresh interval in normal refresh mode in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TREFI1_NS)
tREFI2 Specifies the maximum average refresh interval in fine granularity refresh mode in nanoseconds. (This is a derived parameter and cannot be changed.) (Identifier: DDR5_MEM_DEVICE_TREFI2_NS)
tREFISB Specifies the maximum average refresh interval in fine granularity and same bank refresh mode in nanoseconds. (This is a derived parameter and cannot be changed.) (Identifier: DDR5_MEM_DEVICE_TREFISB_NS)
tCCD_S Specifies the CAS_n to CAS_n command delay for different bank group in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TCCD_S_CYC)
tCCD_L Specifies the CAS_n to CAS_n command delay for same bank group in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TCCD_L_CYC)
tCCD_L_WR Specifies the write CAS_n to write CAS_n command delay for same bank group in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TCCD_L_WR_CYC)
tCCD_L_WR2 Specifies the write CAS_n to write CAS_n command delay for same bank group and the second write is not RMW, in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TCCD_L_WR2_CYC)
tRRD_S Specifies the Activate-to-Activate command delay to different bank group for 1KB page size in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TRRD_S_CYC)
tRRD_L Specifies the Activate-to-Activate command delay to same bank group for 1KB page size in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TRRD_L_CYC)
tFAW Specifies the four activate window for 1KB page size in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TFAW_NS)
tRFC1 Specifies the refresh operation delay in normal refresh mode in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TRFC1_NS)
tRFC2 Specifies the refresh operation delay in fine granularity refresh mode in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TRFC2_NS)
tRFCSB Specifies the refresh operation delay in fine granularity and same bank refresh mode in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TRFCSB_NS)
tRCD Specifies the Activate-to-internal-Read-or-Write delay in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TRCD_NS)
tRP Specifies the row precharge time in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TRP_NS)
tRAS Specifies the Activate-to-Precharge command period in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TRAS_NS)
tRC (tRAS+tRP) Specifies the Activate-to-Activate or Refresh command period in nanoseconds. (This is a derived parameter and cannot be changed.) (Identifier: DDR5_MEM_DEVICE_TRC_NS)
tREFSBRD Specifies the same bank refresh to activate delay in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TREFSBRD_NS)
tWR Specifies the write recovery time in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TWR_NS)
tZQLAT Specifies the ZQ calibration latch time in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TZQLAT_CYC)
tZQCAL Specifies the ZQ calibration time in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TZQCAL_NS)
tMRR Specifies the Mode Register Read (MRR) command period in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TMRR_CYC)
tMRR_P Specifies the Mode Register Read (MRR) pattern to mode register read pattern command spacing in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TMRR_P_CYC)
tMRW Specifies the Mode Register Write (MRW) command period in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TMRW_CYC)
tMRD Specifies the Mode Register Set (MRS) command delay in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TMRD_CYC)
tDFE Specifies the Decision Feedback Equalization (DFE) Mode Register Write update delay time in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TDFE_NS)
tDLLK Specifies the timing of DLLK in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TDLLK_CYC)
tWTR_S Specifies the delay from start of internal write transaction to internal read command for different bank group in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TWTR_S_NS)
tWTR_L Specifies the delay from start of internal write transaction to internal read command for same bank group in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TWTR_L_NS)
tRTP Specifies the internal read command to precharge command delay in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TRTP_CYC)
tPPD Specifies the Precharge-to-Precharge delay in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TPPD_CYC)
tPD Specifies the minimum power down time in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TPD_CYC)
tACTPDEN Specifies the timing of Activate command to power down entry command in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TACTPDEN_CYC)
tPRPDEN Specifies the timing of Precharge All Banks (PREab), Precharge Same Bank (PREsb), or Normal Precharge (PREpb) to power down entry command in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TPRPDEN_CYC)
tREFPDEN Specifies the timing of Refresh All Banks (REFab) or Refresh Same Bank (REFsb) command to power down entry command in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TREFPDEN_CYC)
tXP Specifies the exit power down to next valid command in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TXP_CYC)
tCPDED Specifies the command pass disable delay in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TCPDED_CYC)
tCSL Specifies the Self-Refresh CS_n low pulse width in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TCSL_NS)
tCKSRX Specifies the valid clock requirement before SRX in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TCKSRX_CYC)
tCSH_SREXIT Specifies the self-refresh exit CS_n high pulse width in nanoseconds. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TCSH_SREXIT_NS)
tDQSCK Specifies the DQS_t, DQS_c rising edge output timing location from rising CK_t, CK_c in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TDQSCK_CYC)
tWPRE_EN Specifies the write preamble enable window in cycles. The window size depends on the write preamble mode. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TWPRE_EN_CYC)
tDQSS Specifies the host and system voltage/temperature drift window of first rising DQS_t preamble edge relative to CAS Write Latency (CWL) CK_t-CK_c edge in cycles. Note: This parameter can be auto-computed. (Identifier: DDR5_MEM_DEVICE_TDQSS_CYC)